data sheet the information in this document is subject to change without notice. ? 1998 document no. p13824ej2v0ds00 (2nd edition) date published november 1998 ns cp(k) printed in japan 1 550 nm cw light source ingaasp strained mqw-dfb laser diode module laser diode nx8562lb the mark ? ? ? ? shows major revised points. description the nx8562lb is a 1 550 nm laser diode with polarization maintain fiber (pmf). this device is designed as cw light source and ideal for transmission systems in which external modulators are used. features ? output power p f = 20 mw min. ? wavelength selectable for itu-t standards ? internal thermo-electric cooler and isolator ? hermetically sealed 14-pin butterfly package ? polarization maintain fiber pigtail pin no. pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 29.970.25 8.20.2 5.6 5.15 optical fiber (pmf) length: 1 m min. 0.75 1.0 top view pd l + C r ld #8 #14 #7 #1 cooler thermistor function function thermistor thermistor bias pd anode pd cathode cooler anode cooler cathode gnd gnd gnd gnd, ld anode signal input gnd gnd package dimensions in millimeters pin connections 20.830.13 26.040.13 7 8 1 14 8.890.13 10 min. 15.24 22.3 12.70.15 6.0 0.9 1.25 2.54 0.5 4C 2.67 f
2 nx8562lb optical fiber dimensions in millimeters 400 500 125 nylon pipe cave primary coat 9 m core fm 900 ( m) m 10 1 000 min. -ba: fc-pc connector -ca: sc-pc connector 200 400 m tight buffer panda fiber f m 900 m nylon pipe f m 900 m nylon pipe f m
3 nx8562lb ordering information part number available connector nx8562lb without connector nx8562lb-ba with fc-pc connector nx8562lb-ca with sc-pc connector absolute maximum ratings (t c = 25 c, unless otherwise specified) parameter symbol ratings unit forward current of ld i f 300 ma reverse voltage of ld v r 2.0 v forward current of pd i f 10 ma reverse voltage of pd v r 20 v operating case temperature t c - 20 to +65 c storage temperature t stg - 40 to +85 c lead soldering temperature (10 s) t sld 260 c electro-optical characteristics (t ld = 25 c, t c = - - - - 20 to +65 c) parameter symbol conditions min. typ. max. unit laser set temperature t set 20 35 c forward voltage v f p f = 20 mw 0.9 1.5 v threshold current i th 20 40 ma optical output power from fiber p f i f = 167 ma, t ld = t set 20 mw threshold output power from fiber p th i f = i th 100 m w quantum efficiency h 0.13 w/a peak emission wavelength *1 l p p f = 20 mw, cw, t ld = t set 1 540 1 561 nm spectral line width d n p f = 20 mw, cw, 3 db down 1 2 mhz side mode suppression ratio smsr p f = 20 mw, cw 30 35 db fm response h fm p f = 20 mw 50 70 mhz/ma relative intensity noise rin p f = 20 mw, 20 mhz to 3 ghz - 150 db/hz flat frequency response f m p f = 20 mw, +/ - 3 db 1.8 ghz polarization extinction ratio *2 ext p f = 20 mw, cw 15 20 db *1 wavelength selectable for itu-t standards. *2 polarization state of ld is aligned parallel to the slow axis.
4 nx8562lb electro-optical characteristics (applicable to monitor pd: t ld = 25 c, t c = - - - - 20 to +65 c) parameter symbol conditions min. typ. max. unit monitor current i m p f = 20 mw, v r = 5 v 100 m a dark current i d v r = 5 v 2 10 na tracking error g *1 i m = const. 0.5 db *1 g = 10 log electro-optical characteristics (applicable to thermistor and tec: t ld = 25 c, t c = - - - - 20 to +65 c) parameter symbol conditions min. typ. max. unit thermistor resistance r t ld = 25 c 9.5 10.0 10.5 k w b constant b 3 300 3 400 3 500 k cooler current i c d t = 65 - t set , p f = 20 mw 1.0 a cooler voltage v c d t = 65 - t set , p f = 20 mw 2.0 v p f 20 mw p f (mw) 0 i m i m t ld = t c = 25 ?c t ld = 25 ?c, t c = C20 to +65 ?c (@ p f (25 ?c) = 20 mw) 20 p f
5 nx8562lb dfb-ld family for telecom absolute maximum ratings typical characteristics part number t c ( c) t stg ( c) i th (ma) p f (mw) l p (nm) sdh application package typ. min. typ. ndl7603p series - 40 to +85 - 40 to +85 15 2 1 310 stm-4 : 622 mb/s coaxial ndl7620p series 0 to +70 - 40 to +85 45 (max.) 2 1 310 stm-16: 2.5 gb/s coaxial ndl7701p series - 20 to +85 - 40 to +85 15 2 1 550 stm-4 : 622 mb/s coaxial ndl7705p series - 40 to +85 - 40 to +85 15 2 1 550 stm-4 : 622 mb/s coaxial nx8562lb C20 to +65 C40 to +85 20 20 1 550 *1 cw light source for external modulator bfy nx8563lb series - 20 to +65 - 40 to +85 20 10 itu-t *2 cw light source for external modulator bfy NDL7910P - 20 to +70 - 40 to +85 7 0.5 1 550 *1 stm-16: 2.5 gb/s ea modulator integrated dfb-ld bfy *1 wavelength selectable for itu-t standards upon request. *2 wavelength selectable for itu-t standards.
6 nx8562lb reference document name document no. nec semiconductor device reliability/quality control system c 11159e quality grades on nec semiconductor devices c11531e semiconductor device mounting technology manual c10535e semiconductor selection guide x10679e
7 nx8562lb [memo]
nx8562lb caution within this device there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product semiconductor laser avoid exposure-invisible laser radiation is emitted from this aperture nec corporation nec building, 7-1, shiba 5-chome, minato-ku, tokyo 108-01, japan type number: manufactured: serial number: this product conforms to fda regulations as applicable to standards 21 cfr chapter 1. subchapter j. the export of this product from japan is prohibited without governmental license. to export or re-export this product from a country other than japan may also be prohibited without a license from that country. please call an nec sales representative. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5
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